电子元件与材料2025，Vol.44Issue(4)：416-421,6.DOI:10.14106/j.cnki.1001-2028.2025.1341
四值忆阻模拟器设计及电路实现
Design and circuit implementation of four-valued memristor emulator
摘要
Abstract
In response to the growing demand for higher storage density and energy efficiency,a mathematical model of a four-valued memristor was developed and validated through comprehensive simulations and experiments.Initially,MATLAB simulations were conducted to examine the voltage-current characteristics.The four stable resistance states were revealed,thus confirming the model's theoretical feasibility for multi-valued storage applications.Based on the proposed model,a hardware-level memristor emulator was then designed and tested.The emulator's performance under different resistance states was evaluated through the hardware experiments,and the experimental results show close agreement with the simulation data,demonstrating the accuracy and reliability of the model.关键词
多值忆阻模拟器/数学模型/等效电路/磁滞回线/多值存储Key words
multi-valued memristor emulator/mathematical model/equivalent circuit/hysteresis loop/multi-valued storage分类
信息技术与安全科学引用本文复制引用
杨万里,付钱华,蒋文波,叶笑平..四值忆阻模拟器设计及电路实现[J].电子元件与材料,2025,44(4):416-421,6.基金项目
西华大学重点科研基金资助(Z201105) （Z201105）
