电子元件与材料2025，Vol.44Issue(4)：434-440,7.DOI:10.14106/j.cnki.1001-2028.2025.0015
基于隧穿调制的三级痛觉分类
Tunneling-based classification of level-Ⅲ pain
摘要
Abstract
Although the neuromorphic devices have made progress in simulating synaptic behavior mediated by nociceptors,the current studies still struggle to achieve clear threshold characteristics that reflect the intrinsic high-threshold nature of the pain perception.In addition,the existing work fails to accurately define different pain levels,instead,a single-mode transition is applied to represent the onset of pain.However,the accurate classification of the pain levels is crucial for developing an adaptive alarm system.This study focused on resolving the ambiguous threshold issue in the nociceptor devices and the challenge of classifying the pain levels.A silicon nitride(Si3N4)electron tunneling layer with a thickness of 200 nm was introduced into a back-to-back Schottky diode synaptic device.This layer enables three distinct tunneling regimes,leading to four electron transport modes at the trapping interface.These modes correspond to four synaptic operation states,which together mimic a three-level nociceptive warning function.The experiment results show that the device could reproduce several typical synaptic perception functions under low-intensity stimuli.When the stimulus is increased(either by higher intensity or repeated application),the device exhibits adaptive switching among three operational levels.Furthermore,the device could provide precise classification of the pain levels based on the intensity of the external ultraviolet stimuli,demonstrating the capability for recognizing and managing the external damage.关键词
神经形态器件/多级痛觉感受器/Si3N4/SiO2隧穿层/隧穿模式/阈值管理/模式跳变Key words
neuromorphic device/multilevel nociceptor/Si3N4/SiO2 tunneling layer/tunneling mode/threshold management/mode jumping分类
信息技术与安全科学引用本文复制引用
吴悦,杨成东..基于隧穿调制的三级痛觉分类[J].电子元件与材料,2025,44(4):434-440,7.基金项目
国家自然科学基金(62106111) （62106111）
无锡市科技创新创业资金"太湖之光"科技攻关计划(K20231001) （K20231001）
