电子与封装2025，Vol.25Issue(7)：35-43,9.DOI:10.16257/j.cnki.1681-1070.2025.0149
基于玻璃通孔互连技术的集成无源器件发展
Development of Integrated Passive Devices Based on Through Glass Via Interconnect Technology
刘晓贤 1廖立航 1朱樟明1
作者信息
- 1. 西安电子科技大学集成电路学院模拟集成电路与系统教育部重点实验室,西安 710071
- 折叠
摘要
Abstract
Although the three-dimensional integration technology based on through silicon via can increase the data transmission bandwidth and integration degree,and has outstanding advantages in terms of size,compatibility and performance,it also faces major challenges such as large high-frequency loss and high process cost.Therefore,it is highly necessary to explore the millimeter-wave circuits and system integration technologies based on new substrate materials.Glass or quartz materials can overcome the defects such as high-frequency loss of silicon substrates and are currently relatively ideal substrate materials.Compared with silicon substrates,glass substrates,as low-dielectric insulators,can directly contact metal conductors without the need for an insulating isolation medium layer.Their process complexity and cost are significantly reduced.Their high-frequency electrical properties are more stable,and their coefficient of thermal expansion is similar to that of silicon substrates.When bonding with silicon-based integrated chips,the thermal stress generated is smaller,thereby reducing problems such as warpage and solder joint failure and improving the reliability of three-dimensional packaging.Therefore,the millimeter-wave integrated passive devices(IPDs)based on the glass interposers can achieve good electrical characteristics while maintaining low cost.The development of 3D IPD based on through glass via technology in China is introduced,as well as the influence of parasitic parameters on signal transmission with the development of through glass via technology and the reduction of aperture size.关键词
玻璃通孔/三维集成/集成无源器件/射频前端Key words
through glass via/3D integration/integrated passive device/ratio frequency front end分类
信息技术与安全科学引用本文复制引用
刘晓贤,廖立航,朱樟明..基于玻璃通孔互连技术的集成无源器件发展[J].电子与封装,2025,25(7):35-43,9.
