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降低玻璃基板TGV应力的无机缓冲层方法与仿真分析

赵泉露 赵静毅 丁善军 王启东 陈钏 于中尧

电子与封装2025,Vol.25Issue(7):85-92,8.
电子与封装2025,Vol.25Issue(7):85-92,8.DOI:10.16257/j.cnki.1681-1070.2025.0159

降低玻璃基板TGV应力的无机缓冲层方法与仿真分析

Method and Simulation Analysis of Inorganic Buffer Layer for Reducing TGV Stress in Glass Substrate

赵泉露 1赵静毅 1丁善军 1王启东 1陈钏 1于中尧1

作者信息

  • 1. 中国科学院微电子研究所,北京 100029
  • 折叠

摘要

Abstract

Glass substrate has emerged as a key material for advanced packaging due to its superior mechanical properties and high flatness.To reduce the glass core stress,a scheme of sintering an inorganic buffer layer between the TGV glass and copper on the glass substrate is proposed.To ensure compatibility with subsequent electroless metallization processes,simulation analysis is conducted to analyze the effects of three types of inorganic buffer layers,namely ZnO,TiO2,and ZrO2,on the stress distribution of the glass core.At the same time,the influences of buffer layer thickness,glass core thickness,and TGV diameter on the glass core stress are also investigated.The results show that,compared with TGV filled with pure copper,the proposed scheme can effectively reduce the stress of the glass core during the heating process in the lamination stage.Among them,the glass core stress of the sintered 5 μm TiO2 is reduced by 66.58%.At the same time,the thicker the buffer layer and the smaller the TGV diameter,the lower the glass core stress during the TGV heating process of the glass substrate.These findings can provide an important reference for reducing the stress of the glass substrate TGV.

关键词

无机缓冲层/TGV金属化/玻璃基板/热应力/有限元仿真

Key words

inorganic buffer layer/TGV metallization/glass substrate/thermal stress/finite element simulation

分类

信息技术与安全科学

引用本文复制引用

赵泉露,赵静毅,丁善军,王启东,陈钏,于中尧..降低玻璃基板TGV应力的无机缓冲层方法与仿真分析[J].电子与封装,2025,25(7):85-92,8.

基金项目

中国科学院青年创新促进会项目(2023126) (2023126)

电子与封装

1681-1070

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