电子元件与材料2025，Vol.44Issue(6)：735-740,6.DOI:10.14106/j.cnki.1001-2028.2025.0103
Cu-SiO2化学机械抛光过程中Cu碟形缺陷研究及优化
Optimization of the Cu dishing behavior during Cu-SiO2 chemical mechanical polishingprocess
刘玉佳 1肖克来提 2陈达龙 2张进 2张凯2
作者信息
- 1. 上海大学微电子学院,上海 200444||中国科学院上海微系统与信息技术研究所,上海 200050
- 2. 中国科学院上海微系统与信息技术研究所,上海 200050
- 折叠
摘要
Abstract
Hybrid bonding,as an advanced packaging technology for high-density interconnects,relies on chemical mechanical polishing(CMP)to achieve wafer planarization for high-quality bonding.The formation of the dishing defects during CMP processes presents significant challenges to the bonding quality.To investigate the formation mechanism of dishing defect in CMP processes and their impact on hybrid bonding quality,the experimental and simulation analyses were conducted to correlate overpolishing time,copper pad sizes and dishing depth.The results demonstrate that the dishing depth exhibits positive correlations with both pad size and overpolishing time.A three-step CMP correction process was developed to mitigate excessive dishing:Initially copper layer CMP was performed,followed by barrier layer CMP,and finally dielectric compensation CMP was performed to reduce the dishing depth.Finite element simulations further confirm the critical influence of the dishing defects on the bonding quality,revealing that the effective bonding area exhibits a decreasing trend with increasing dishing depth.This paper provides insights into dishing defect formation and practical guidance for enhancing copper interconnect reliability in hybrid bonding through controlled dishing depth.关键词
混合键合/化学机械抛光/碟形缺陷/抛光液Key words
hybrid bonding/chemical mechanical polishing/dishing/slurry分类
信息技术与安全科学引用本文复制引用
刘玉佳,肖克来提,陈达龙,张进,张凯..Cu-SiO2化学机械抛光过程中Cu碟形缺陷研究及优化[J].电子元件与材料,2025,44(6):735-740,6.
