电子元件与材料2025，Vol.44Issue(6)：649-654,661,7.DOI:10.14106/j.cnki.1001-2028.2025.1519
双P型浮空埋层结构LDMOS击穿特性研究
Research on breakdown characteristics of LDMOS with double P-type floating buried layers
摘要
Abstract
To obtain a high-Q lateral double-diffused metal-oxide-semiconductor field-effect transistor(LDMOSFET)with both high breakdown voltage and low on-state resistance,this paper introduces a novel structure with double P-type floating buried layers(DP-LDMOS)into the conventional planar gate LDMOS(CON-LDMOS)architecture,leveraging the field pinch-off voltage principle.The newly introduced highly-doped double P-type floating buried layers enhance the depletion of the drift region by significantly shifting the depletion boundary towards the drain side.The depletion of the drift region is more thorough,leading to an improved breakdown voltage.Simulation results indicate that,when the parameters of the double P-type floating buried layers are fixed,the breakdown voltage firstly increases and then decreases with the doping concentration of the drift region.At constant doping concentration of the drift region,the breakdown voltage exhibits an initial increase and a followed decrease as the spacing,doping concentration,and thickness of the double P-type floating buried layers are increased.After simulation and optimization,the DP-LDMOS demonstrates superior performance compared to the CON-LDMOS,namely,a breakdown voltage of 1123 V(an enhancement of 189.7％),an on-state resistance of 20.99 mΩ·cm2(an improvement of 95.3％),and a improved quality factor from 13.98 MW/cm2 to 60.08 MW/cm2(a significant increase of 329.8％).关键词
击穿电压/比导通电阻/LDMOS/浮空埋层Key words
breakdown voltage/specific on-resistance/LDMOS/floating buried layer分类
信息技术与安全科学引用本文复制引用
李尧,张鹏杰,牛瑞霞,张栩莹..双P型浮空埋层结构LDMOS击穿特性研究[J].电子元件与材料,2025,44(6):649-654,661,7.基金项目
国家自然科学基金(61905102,62264008) （61905102,62264008）
兰州市青年科技人才创新项目(2023-QNQ-119) （2023-QNQ-119）
甘肃省高校青年博士支持项目(2024QB-050) （2024QB-050）
开放课题(甘财教[2023]36号-集成电路产业研究院) （甘财教[2023]36号-集成电路产业研究院）
