电子与封装2025，Vol.25Issue(10)：9-17,9.DOI:10.16257/j.cnki.1681-1070.2025.0114
基于循环内聚力模型的TSV界面裂纹扩展模拟研究
Simulation Study of TSV Interface Crack Propagation Based on Cyclic Cohesive Zone Model
黄玉亮 1秦飞 1吴道伟 2李逵 2张雨婷 2代岩伟1
作者信息
- 1. 北京工业大学电子封装技术与可靠性研究所,北京 100124
- 2. 西安微电子技术研究所,西安 710119
- 折叠
摘要
Abstract
The through silicon via(TSV)interface reliability problem has been a hot topic in the field of electronic packaging.Through numerical simulation methods,the cyclic cohesive zone model is used to study the damage cracking problem of Cu and SiO2 interface under temperature cyclic loads.A cyclic cohesive zone model considering fatigue damage is established based on the bilinear cohesive zone model,and the rationality of the model is verified.The damage cracking phenomenon of the Cu and SiO2 interface of TSV structures of different sizes under temperature cycling loads is simulated,and its patterns are studied.The research results show that the interface strength between Cu and SiO2 materials decreases continuously during the temperature cycling process,and the interface damage accumulates continuously.Finally,cracks are generated at the top of TSV and gradually expand.With the increase of TSV diameter,the crack propagation rate along the interface of Cu and SiO2 gradually increases.The plastic deformation of Cu and interface damage cracking have obvious size effects.The research results can be used to guide the optimization design of TSV interconnection structure.关键词
硅通孔/温度循环/循环内聚力模型/界面裂纹Key words
through silicon via/temperature cycle/cyclic cohesive zone model/interface crack分类
信息技术与安全科学引用本文复制引用
黄玉亮,秦飞,吴道伟,李逵,张雨婷,代岩伟..基于循环内聚力模型的TSV界面裂纹扩展模拟研究[J].电子与封装,2025,25(10):9-17,9.
