电子与封装2025，Vol.25Issue(10)：68-73,6.DOI:10.16257/j.cnki.1681-1070.2025.0109
面向碳纳米管集成电路的新型静电放电防护结构研究
Research on Novel Electrostatic Discharge Protection Structures for Carbon Nanotube Integrated Circuits
摘要
Abstract
Aiming at the problems of small failure current and low failure voltage of electrostatic discharge(ESD)protection devices for carbon-based integrated circuits,two new types of carbon nanotube field effect transistor(CNTFET)ESD protection devices are systematically proposed based on the synergistic design theory of the gate-controlled electric field modulation technique and dynamic potential modulation.The DC characteristics of conventional CNTFETs are studied.When a high gate voltage is applied,the CNTFET is in a high-resistance state,meeting the design requirements for ESD protection.Based on this,a gate-drain(GD)CNTFET structure is innovatively proposed,and experimental results show that the failure current of the GD-CNTFET reaches 93 mA,but the failure voltage is only 46 V.Further,a CNTFET with a floating electrode structure(FE-CNTFET)is proposed through the synergistic design of gate voltage modulation and dynamic potential modulation,which can effectively inhibit the high electric field concentration of the gate oxide layer,and achieve a failure voltage of 79 V.The novel devices provide important design ideas for the ESD protection system of carbon-based integrated circuits.关键词
碳纳米管场效应晶体管/静电放电防护/能带结构分析Key words
carbon nanotube field effect transistor/electrostatic discharge protection/energy band structure analysis分类
电子信息工程引用本文复制引用
金浩然,刘俊良,梁海莲,顾晓峰..面向碳纳米管集成电路的新型静电放电防护结构研究[J].电子与封装,2025,25(10):68-73,6.基金项目
长三角科技创新共同体联合项目(2022CSJGG0402) （2022CSJGG0402）
江苏省自然科学基金(BK20231038) （BK20231038）
中央高校基本科研业务费专项资金(JUSRP123062) （JUSRP123062）
