电子元件与材料2025，Vol.44Issue(9)：1025-1033,9.DOI:10.14106/j.cnki.1001-2028.2025.0099
一种带有钳位二极管的沟槽型SiC MOSFET
A superjunction 4H-SiC trench MOSFET with an integrated clamping diode
摘要
Abstract
A trench-type superjunction SiC MOSFET(Integrated Clamping Diode Superjunction MOSFET,SCD-MOS)structure with an embedded clamping diode was proposed,which integrated a clamping diode between the P+shield and the source electrode.The introduction of the clamping diode not only improves the dynamic performance of the device,but also eliminates the dynamic on-resistance of the device.Numerical simulations were performed using the Sentaurus TCAD simulation tool to systematically analyze the electrical characteristics of the proposed structure.Results demonstrate that compared with the grounded P-shield trench MOSFET(GP-MOS)with split-gate and superjunction,the proposed SCD-MOS structure achieves reduced specific on-resistance while maintaining a comparable avalanche breakdown voltage.When benchmarked against the floating P-shield trench MOSFET(FP-MOS)with similar split-gate and superjunction configurations,the SCD-MOS exhibits a significantly higher breakdown voltage,along with a substantially reduced electric field in the gate oxide and a reduced reverse transfer capacitance during breakdown,despite showing nearly identical specific on-resistance.Benefiting from the clamping diode implementation,the proposed structure demonstrates superior capacitive characteristics,with reverse transfer capacitance reductions of 5.7％and 31.3％compared to GP-MOS and FP-MOS,respectively.The resultant reductions in gate-drain charge(Qgd)and total gate charge(Qg)effectively contribute to enhanced switching speed.关键词
沟槽型SiC MOSFET/钳位二极管/栅漏电容/比导通电阻Key words
trench SiC MOSFET/clamp diode/gate-drain capacitance/specific on-resistance分类
电子信息工程引用本文复制引用
邹明锋,武华,张安安,朱春晓,万树兵..一种带有钳位二极管的沟槽型SiC MOSFET[J].电子元件与材料,2025,44(9):1025-1033,9.基金项目
国家自然科学基金(61650404) （61650404）
江西省教育厅科技项目(GJJ201411) （GJJ201411）
