电子与封装2025，Vol.25Issue(11)：20-26,7.DOI:10.16257/j.cnki.1681-1070.2025.0177
高温MEMS压力传感器芯片设计与实现方法研究
Research on Design and Implementation Methods of High-Temperature MEMS Pressure Sensor Chips
摘要
Abstract
Aiming at requirements of 25 MPa pressure measurement in the high-temperature environment of the nuclear industry,a high-temperature MEMS pressure sensor chip based on CMOS process is designed and implemented.The chip is fabricated using silicon-on-insulator(SOI)wafer,achieving full dielectric isolation through silicon trench and filling processes,which effectively avoids the issue of intrinsic excitation leakage in PN junction isolation under high temperatures and enhances thermal stability.Experimental results show that the chip pressure measurement range is 0-25 MPa.At room temperature,its nonlinear error is better than 0.35％FS,the sensitivity reaches 3.95 mV/MPa,the piezoresistor linear error is less than 0.07％,with a temperature coefficient of 2 001.17×10-6/℃ at 275 ℃,the zero temperature drift of the sensor is within-0.08 mV/℃,and the thermal stability time is shortened by 34.29％compared with that of traditional trench isolation.This design is anticipated to offer a reliable solution for pressure measurement in high-temperature nuclear environments and promote the development of CMOS MEMS integration technology.关键词
压力传感器/全介质隔离/SOI/CMOS工艺Key words
pressure sensor/full dielectric isolation/silicon-on-insulator/CMOS process分类
信息技术与安全科学引用本文复制引用
陈培仓,华传洋,朱赛宁,王涛,聂萌,郭贤,吴建伟..高温MEMS压力传感器芯片设计与实现方法研究[J].电子与封装,2025,25(11):20-26,7.基金项目
江苏省基础研究计划自然科学基金(BK20243023) （BK20243023）
