电子与封装2025，Vol.25Issue(11)：55-66,12.DOI:10.16257/j.cnki.1681-1070.2025.0131
28 nm CMOS工艺下电平移位器的对比研究
Comparison and Research of Level Shifter in 28 nm CMOS Process
摘要
Abstract
Level shifter(LS)is a key module for solving cross voltage domain communication.Based on a 28 nm CMOS process,the device parameters of LS structures are adjusted.The delay,power consumption,and robustness of LS implementation circuits are then systematically quantified through transient simulation,process corner analysis,and Monte Carlo simulation.Results indicate that the competitive suppression type Ⅰdifferential layer stacked voltage switch(DCVS)and Wilson current mirror(WCM)structures are identified as having the optimal overall performance at a 1 GHz high-frequency input,with delays as low as 68.21 ps and 99.86 ps,and power-delay products as low as 1 066.11 ns·nW and 1 558.25 ns·nW,respectively.关键词
电平移位器/CMOS/延迟/对比Key words
level shifter/CMOS/delay/comparison分类
信息技术与安全科学引用本文复制引用
许嘉航,白春风..28 nm CMOS工艺下电平移位器的对比研究[J].电子与封装,2025,25(11):55-66,12.基金项目
国家科技重大专项(2024ZD1002503-06) （2024ZD1002503-06）
