电子与封装2025，Vol.25Issue(11)：67-74,8.DOI:10.16257/j.cnki.1681-1070.2025.0137
一种具有载流子动态调制的双栅IGBT
Dual-Gate IGBT with Carrier Dynamic Modulation
摘要
Abstract
A dual-gate insulated-gate bipolar transistor(DG-IGBT)with carrier dynamic modulation is proposed,which can significantly reduce the turn-off loss.Based on technology computer aided design(Sentaurus TCAD),electrical characteristics of DG-IGBTs with different gate control cell ratios(1∶2 and 1∶4)are simulated.The DG-IGBT dynamically modulates carrier distribution to reduce carrier concentration on the emitter side within the drift region during turn-off.This promotes depletion layer expansion and accelerates the rise rate of the collector voltage,thereby lowering turn-off loss.Through device simulation and experimental testing,the impact of carrier dynamic modulation on the turn-off loss of IGBTs is systematically investigated.Test results indicate that at a current density of 100 A/cm2,the DG-IGBT with a cell ratio of 1∶2 reduces turn-off loss by 22.2％and total turn-off loss by 12.3％,and the device with a cell ratio of 1∶4 decreases turn-off loss by 37.2％and total turn-off loss by 32.9％,effectively improving the trade-off between IGBT on-state voltage drop and turn-off loss.关键词
IGBT/关断损耗/双栅/开关/元胞比例Key words
IGBT/turn-off loss/dual gate/switching/cell ratio分类
信息技术与安全科学引用本文复制引用
刘晴宇,杨禹霄,陈万军..一种具有载流子动态调制的双栅IGBT[J].电子与封装,2025,25(11):67-74,8.基金项目
国家自然科学基金(U21A20499,62334003) （U21A20499,62334003）
四川省创新研究群体项目(2025NSFTD0009) （2025NSFTD0009）
