电子与封装2025，Vol.25Issue(11)：75-81,7.DOI:10.16257/j.cnki.1681-1070.2025.0127
碳化硅MOSFET的单粒子漏电退化研究
Investigation on Single-Event Leakage Degradation of SiC MOSFETs
徐倩 1马瑶 1黄文德 1杨诺雅 1王键 1龚敏 1李芸 1黄铭敏 1杨治美1
作者信息
- 1. 四川大学物理学院微电子技术四川省重点实验室,成都 610064||四川大学物理学院辐射物理及技术教育部重点实验室,成都 610064
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摘要
Abstract
The degradation behavior of single-event leakage in SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is systematically investigated through heavy-ion irradiation experiments,and the impact of latent damage on gate reliability is explored.The internal structural changes of devices affected by single-event latent damage are characterized using optical beam-induced resistance change(OBIRCH),focused ion beam(FIB),and transmission electron microscopy(TEM)techniques.By correlating the macroscopic electrical characteristics with microscopic structural variations,the mechanism of single-event leakage degradation in SiC MOSFETs is elucidated.The results provide a theoretical basis for improving the reliability of SiC MOSFETs under complex irradiation environments.关键词
SiC/MOSFET/单粒子效应/漏电退化/潜在损伤Key words
SiC/MOSFET/single-event effect/leakage degradation/latent damage分类
信息技术与安全科学引用本文复制引用
徐倩,马瑶,黄文德,杨诺雅,王键,龚敏,李芸,黄铭敏,杨治美..碳化硅MOSFET的单粒子漏电退化研究[J].电子与封装,2025,25(11):75-81,7.
