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光电双模态感知的有机晶体管及人工突触性能

张文鑫 巫晓敏 严育杰

电子元件与材料2026,Vol.45Issue(2):145-149,5.
电子元件与材料2026,Vol.45Issue(2):145-149,5.DOI:10.14106/j.cnki.1001-2028.2026.1383

光电双模态感知的有机晶体管及人工突触性能

Organic transistor with photoelectric dual-modality perception and artificial synaptic functionality

张文鑫 1巫晓敏 1严育杰2

作者信息

  • 1. 福建师范大学 福建省量子调控与新能源材料重点实验室,福建 福州 350117
  • 2. 厦门理工学院 福建省功能材料及应用重点实验室,福建 厦门 361024
  • 折叠

摘要

Abstract

With the rapid advancement of artificial intelligence and neuromorphic computing,organic field-effect transistors have emerged as promising building blocks for neuromorphic hardware owing to their tunable electrical properties.However,conventional organic neuromorphic devices typically provide only a single synaptic modality,limiting their applicability to multimodal perception and complex information processing.Here,we presented a photoelectric dual-modality organic synaptic transistor that employs an IDTBT/polystyrene(PS)composite dielectric.Under visible illumination,the device underwent a reversible functional transition from a switching transistor to a neuromorphic synapse,characterized by an expansion of the hysteresis window by 7.9 V,a 26-fold increase in conductance and a 150%synaptic enhancement ratio.Systematic electrical and synaptic characterizations under different operating states indicate that the device response is governed by the synergistic interplay between photogenerated carrier modulation in the channel and charge trapping in the electret.By combining high-mobility charge transport with light-controlled trapping dynamics,this approach enables light-programmable synaptic behavior without compromising transistor performance,offering a new device paradigm for integrated sensing,memory and computing in multimodal neuromorphic platforms.

关键词

多模态/薄膜/突触/有机场效应晶体管

Key words

multimodality/films/synapse/organic field-effect transistors

分类

信息技术与安全科学

引用本文复制引用

张文鑫,巫晓敏,严育杰..光电双模态感知的有机晶体管及人工突触性能[J].电子元件与材料,2026,45(2):145-149,5.

基金项目

国家自然科学基金(62304189) (62304189)

福建省自然科学基金(2023J01520) (2023J01520)

电子元件与材料

1001-2028

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