| 注册
首页|期刊导航|电子元件与材料|IGBT模块在机械振动与循环热载荷耦合作用下的疲劳失效机理研究

IGBT模块在机械振动与循环热载荷耦合作用下的疲劳失效机理研究

刘堰祯 王维民 户东方 陈奕屹

电子元件与材料2026,Vol.45Issue(2):191-200,207,11.
电子元件与材料2026,Vol.45Issue(2):191-200,207,11.DOI:10.14106/j.cnki.1001-2028.2026.1348

IGBT模块在机械振动与循环热载荷耦合作用下的疲劳失效机理研究

A study on fatigue failure mechanism of IGBT modules under coupled mechanical vibration and cyclic thermal loading

刘堰祯 1王维民 1户东方 1陈奕屹2

作者信息

  • 1. 北京化工大学 高端机械装备健康监控与自愈化北京市重点实验室,北京 100029
  • 2. 北京石油化工学院 机械工程学院,北京 102617
  • 折叠

摘要

Abstract

To investigate the internal damage evolution mechanism and fatigue life of high-power Insulated Gate Bipolar Transistor(IGBT)modules under multi-physics field coupling effects,fatigue life prediction models were established for IGBTs under single thermal loading,single vibrational loading,and thermal-mechanical coupled loading across multiple time scales.The establishment of these models was based on the integration of theoretical models(e.g.,the Miner linear cumulative damage rule)and the conduct of finite element simulation analysis.Accelerated aging tests based on DC power cycling were conducted to validate the simulation results.The simulation results demonstrate that thermal loading exerts a substantially more pronounced influence on fatigue degradation than vibrational loading.Furthermore,material degradation accelerates under thermal-mechanical coupling conditions,consequently leading to a significant decrease in fatigue life.Both simulation and experimental results consistently identify the chip and the upper solder layer as primary failure hotspots,with damage initiating from the chip and propagating outward;The deviation between the simulated and experimental data is 24.05%.This study provides significant engineering reference value for the reliability assessment,life prediction,and optimized design of IGBT modules.

关键词

IGBT模块/热-振耦合/疲劳寿命/可靠性

Key words

IGBT module/thermal-mechanical coupling/fatigue life/reliability

分类

信息技术与安全科学

引用本文复制引用

刘堰祯,王维民,户东方,陈奕屹..IGBT模块在机械振动与循环热载荷耦合作用下的疲劳失效机理研究[J].电子元件与材料,2026,45(2):191-200,207,11.

基金项目

国家重点研发计划(2018YFB1201801-4) (2018YFB1201801-4)

电子元件与材料

1001-2028

访问量0
|
下载量0
段落导航相关论文