电子元件与材料2026，Vol.45Issue(3)：285-289,295,6.DOI:10.14106/j.cnki.1001-2028.2026.1393
基于双重噪声抵消的宽带低噪声放大器设计
Design of a wideband low-noise amplifier with dual-path noise cancellation
摘要
Abstract
To break the trade-off between noise figure(NF)and power consumption in traditional noise-canceling low-noise amplifiers(LNAs),a wideband LNA was designed using on the SMIC 65 nm process,covering a bandwidth of 0.2-6.0 GHz.This LNA adopted a dual-path noise-cancelling structure,which can effectively reduce the amplifier's noise figure while maintaining low power consumption.To further reduce the quiescent power consumption,an NMOS-PMOS complementary transistor topology was employed.Measurement results indicate that within the operating frequency band,the amplifier achieves a gain of 14-16 dB,a noise figure of 3.5-4 dB,and an input third-order intercept point(IIP3)ranging from 2 dBm to 3.5 dBm,with a total quiescent current of only 4 mA.Compared with other state-of-the-art designs,the proposed LNA has the advantages of low power consumption,low noise figure,and compact chip area.关键词
噪声抵消/低噪声放大器/噪声系数/输入三阶交调点Key words
noise cancelling/low-noise amplifier/noise figure(NF)/input third-order intercept point(IIP3)分类
信息技术与安全科学引用本文复制引用
汪震,孙景业..基于双重噪声抵消的宽带低噪声放大器设计[J].电子元件与材料,2026,45(3):285-289,295,6.基金项目
陕西省教育厅重点科学研究计划项目(21JY038) （21JY038）
