电子元件与材料2026，Vol.45Issue(3)：329-336,8.DOI:10.14106/j.cnki.1001-2028.2026.1445
基于SiC-MOSFET的快前沿固态方波源
Fast-front solid-state Marx generator based on SiC-MOSFET
摘要
Abstract
A solid-state square-wave pulse source was designed and implemented to generate high-voltage square-wave pulses with fast rise times under high-repetition-rate operation.The main circuit adopts a Marx topology with SiC MOSFETs as power switches.A multi-channel magnetically isolated gate driving system was developed to ensure synchronous switching,and a dedicated driving scheme was proposed to suppress magnetic core saturation while enabling flexible adjustment of the drive pulse width.The key factors affecting the pulse rise time were investigated,and corresponding optimizations were performed at different stages of the driving system to enhance the output performance.Experimental results show that the developed pulse source operates stably,with an adjustable output voltage ranging from 1 kV to 10 kV and a pulse width of 0.5 μs to 3 μs.The maximum repetition frequency reaches 100 kHz.A minimum pulse rise time of 35 ns is achieved,and the voltage droop at the pulse flat top is controlled within 5%,which demonstrates excellent square-wave characteristics and reliable parameter controllability.The proposed driving scheme and pulse source provide an effective solution for high-repetition-rate pulsed power applications.关键词
固态方波源/快前沿/Marx电路/磁隔离同步驱动Key words
solid-state square-wave source/fast rise time/Marx circuit/magnetically isolated synchronous drive分类
信息技术与安全科学引用本文复制引用
杜千,李元晟,李章财,王之哲,江进波..基于SiC-MOSFET的快前沿固态方波源[J].电子元件与材料,2026,45(3):329-336,8.基金项目
国家自然科学基金(51707105) （51707105）
