电子元件与材料2026，Vol.45Issue(3)：337-346,10.DOI:10.14106/j.cnki.1001-2028.20256.1349
基于AFD的MCM互连可靠性有限元分析
Interconnect reliability analysis of MCM based on AFD
摘要
Abstract
In order to analyze the interconnect reliability ofthe multi-chip module(MCM),a three-dimensional model composed of two Si switch chips and two GaAs low-noise amplifiers was constructed using ANSYS Parametric Design Language(APDL).Based on the Atomic Flux Divergence(AFD)theory and combined with Finite Element Analysis(FEA),point-coupled transient simulation analysis of the MCM was conducted to evaluate the interconnect reliability of the MCM under AC operating conditions and different thermal stresses.Interconnect reliability prediction under different current,line width and temperature conditions was achieved.This interconnect reliability analysis performed considering both transient thermal states and AC operating states for integrated circuits(ICs)simultaneously.The method can be used to guide layout design and improve the reliability and lifetime of MCM chips.关键词
电迁移/有限元分析(FEA)/多芯片模块(MCM)/互连可靠性/APDLKey words
electromigration/finite element analysis(FEA)/multi-chip module(MCM)/interconnect reliability/ANSYS parametric design language(APDL)分类
信息技术与安全科学引用本文复制引用
林倩,张博昊,邬海峰..基于AFD的MCM互连可靠性有限元分析[J].电子元件与材料,2026,45(3):337-346,10.基金项目
国家自然科学基金(62161046) （62161046）
青海省自然科学面上基金(2025-ZJ-954M) （2025-ZJ-954M）
