电子元件与材料2026，Vol.45Issue(4)：406-413,8.DOI:10.14106/j.cnki.1001-2028.2026.1389
一种无耗尽型场效应管的低功耗电压基准电路
A low-power voltage reference circuit with depletion-free field-effect transistors
李新 1姚爱民 1杨森林1
作者信息
- 1. 沈阳工业大学 信息科学与工程学院,辽宁沈阳 110870
- 折叠
摘要
Abstract
Aiming at the problems of high cost and high power consumption in traditional reference voltage circuits,a low-cost,low-power reference voltage circuit was designed.This circuit employed MOS transistors operating in the subthreshold region,utilized the negative temperature coefficient characteristic of their threshold voltage(VTH),and combined the positive temperature coefficient voltage generated by the gate-coupled MOSFET unit biased in the subthreshold region to achieve a lower temperature coefficient through the superposition of positive and negative temperature coefficient voltages.Based on the 0.18 μm BCD process,simulations were conducted in the Cadence Spectre environment.Simulation results show that over a temperature range of-40 ℃ to 125 ℃ with a supply voltage of 3.3 V,the circuit maintains a stable output voltage of about 993 mV with a fluctuation of only 2.18 mV;the temperature coefficient reaches 13.2× 10-6/℃,and the power supply rejection ratio(PSRR)is-48.7 dB;the quiescent current is as low as 93.28 nA,and the power consumption is only 0.308μW.This circuit has no operational amplifier structure and does not adopt depletion-mode field-effect transistors,realizing a low-cost,low-power reference voltage source with nA-level quiescent current.It has advantages in integrated circuit applications sensitive to cost and power consumption.关键词
基准电压电路/低功耗/无运放/低成本Key words
voltage bandgap circuits/low power consumption/low cost/no operational amplifier分类
信息技术与安全科学引用本文复制引用
李新,姚爱民,杨森林..一种无耗尽型场效应管的低功耗电压基准电路[J].电子元件与材料,2026,45(4):406-413,8.
