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一种Brokaw型高电源抑制低温漂基准电压源

张涛 秦权 刘劲

电子元件与材料2026,Vol.45Issue(4):424-430,7.
电子元件与材料2026,Vol.45Issue(4):424-430,7.DOI:10.14106/j.cnki.1001-2028.2026.1450

一种Brokaw型高电源抑制低温漂基准电压源

A Brokaw-type bandgap voltage reference with high RSRR and low drift

张涛 1秦权 1刘劲1

作者信息

  • 1. 武汉科技大学 信息科学与工程学院,湖北武汉 430081
  • 折叠

摘要

Abstract

To address the issues of large temperature drift in traditional Brokaw bandgap reference(BGR)circuits over wide temperature ranges and the inherent limitations of power supply rejection(PSR)performance in op-amp-less architectures,a high-PSRR and low-drift BGR circuit was proposed based on the Dongbu HiTek 0.18 μm BCD process.Piecewise temperature compensation technology was utilized,in which compensation currents were introduced in the low-temperature and high-temperature segments,respectively,to significantly reduce the temperature coefficient.A BJT self-clamping structure was designed to replace the traditional operational amplifier clamping scheme,thereby effectively reducing circuit complexity and power consumption.In addition,a novel negative feedback loop was introduced to compensate for the impact of the op-amp-less architecture on PSR performance.Cadence simulation results show that over a wide temperature range of-55 ℃ to 125 ℃,the temperature coefficient(TC)of the output reference voltage is 1.5×10-6 ℃-1 and the power supply rejection ratio(PSRR)is 81.4 dB at DC.This design achieves high precision and superior power supply rejection capability within an op-amp-less architecture,making it suitable for high-performance analog integrated circuit systems.

关键词

基准电压/高电源抑制/低温漂

Key words

reference voltage/high power supply rejection/low temperature drift

分类

信息技术与安全科学

引用本文复制引用

张涛,秦权,刘劲..一种Brokaw型高电源抑制低温漂基准电压源[J].电子元件与材料,2026,45(4):424-430,7.

基金项目

国家自然科学基金(61873196) (61873196)

电子元件与材料

1001-2028

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