电子元件与材料2026，Vol.45Issue(4)：454-459,6.DOI:10.14106/j.cnki.1001-2028.2026.1471
无铅双钙钛矿忆阻器的制备及其神经形态计算
Preparation of lead-free double perovskite memristor and its neuromorphic computing
摘要
Abstract
Lead-based perovskites suffer from inherent toxicity and instability.To address these issues,this work focused on the environmentally friendly lead-free double perovskite Cs2 AgBiBr6 and conducted research on its resistive switching characteristics and neuromorphic applications.A smooth and dense Cs2AgBiBr6 film was deposited on an FTO substrate via spin-coating using methyl acetate as an anti-solvent.The film exhibits low surface roughness,with a root mean square(RMS)roughness of 6.96 nm and an average roughness of 5.65 nm.Using this film as the functional layer,an FTO/Cs2 AgBiBr6/Ag memristor was fabricated.The device shows stable bipolar resistive switching with a SET voltage of+1.5 V,a RESET voltage of-1.0 V,an ON/OFF ratio of 42,and an endurance of over 100 cycles.Furthermore,it successfully emulates long-term potentiation(LTP)and long-term depression(LTD).A three-layer neural network based on this memristor achieves a recognition accuracy of 95％ on the MNIST handwritten digit dataset.This work highlights the potential of Cs2AgBiBr6-based memristors for low-power and high-efficiency neuromorphic computing.关键词
Cs2AgBiBr6薄膜/忆阻器/阻变性能/神经形态计算Key words
Cs2AgBiBr6 film/memristor/resistive switching/neuromorphic computing分类
通用工业技术引用本文复制引用
龙光梅,吴文昌,龙宇兴,伍忠梅,潘祖钦,曾凡菊..无铅双钙钛矿忆阻器的制备及其神经形态计算[J].电子元件与材料,2026,45(4):454-459,6.基金项目
大学生创新创业训练计划国家项目(202310669010) （202310669010）
