摘要
Abstract
To meet the demand for low-voltage high-current power supply in new equipment such as AI chips and digital signal processors(DSPs),and to address the issues of low efficiency and large volume in traditional two-stage power supply architectures,a single-stage half-bridge current-doubler rectifier converter based on thick-film hybrid integration technology is designed.By analyzing the problems of low conductor current density,poor heat dissipation capacity and high high-frequency losses in thick film processes in high-current applications,it is proposed to adopt high thermal conductivity active metal brazed(AMB)ceramic substrates and an optimized power interconnection structure to enhance the current-carrying capacity and heat dissipation performance.The circuit employs the LM5035C control chip to achieve feedforward voltage-mode modulation and synchronous rectification drive,while the transformer is designed with a 4∶1 turn ratio parallel structure to reduce winding losses.A test prototype with an input voltage range of 20-38 V,an output voltage of 1 V,and an output current of 50 A is developed.The peak efficiency of this prototype exceeds 90％,verifying the feasibility of the proposed structure in achieving high power density,high efficiency,and good dynamic response,and providing a reliable integrated power solution for low-voltage high-current applications in new electronic equipment.关键词
半桥倍流整流变换器/厚膜混合集成电路/低压大电流/AMB基板/同步整流/互连工艺Key words
half-bridge current-doubler rectifier converter/thick-film hybrid integrated circuit/low-voltage high-current/AMB substrate/synchronous rectification/interconnection process分类
信息技术与安全科学
