电子与封装2026，Vol.26Issue(5)：75-80,6.DOI:10.16257/j.cnki.1681-1070.2026.0054
面向高性能器件的SIPOS薄膜制备:沉积压力的优化与影响分析
Preparation of SIPOS Thin Films for High-Performance Devices:Optimization and Impact Analysis of Deposition Pressure
张可可 1安湘琛 1袁源1
作者信息
- 1. 无锡中微晶园电子有限公司,江苏无锡 214100
- 折叠
摘要
Abstract
To enhance the within-wafer uniformity of semi-insulating polysilicon(SIPOS)films and the withstand voltage performance of devices,the synergistic effect of pressure and the N2O/SiH4 gas flow ratio(γ)in the low-pressure chemical vapor deposition process is systematically investigated.A series of SIPOS films are prepared by fixing the process temperature and adjusting the γ value and deposition pressure.The results indicate that film uniformity is insensitive to pressure variations at low γ values.However,under highγ conditions,low deposition pressure leads to significant radial and axial concentration gradients of reaction gases on the wafer surface.These gradients persist due to limited surface diffusion,resulting in within-wafer non-uniformity in both film thickness and oxygen content.This non-uniformity ultimately degrades the device's withstand voltage performance and reliability.Consequently,a moderate deposition pressure is identified as the optimal process window to balance excellent film uniformity with high withstand voltage characteristics.关键词
半绝缘掺氧多晶硅/耐压性能/氧摩尔分数Key words
semi-insulating polysilicon/withstand voltage performance/oxygen mole fraction分类
信息技术与安全科学引用本文复制引用
张可可,安湘琛,袁源..面向高性能器件的SIPOS薄膜制备:沉积压力的优化与影响分析[J].电子与封装,2026,26(5):75-80,6.
