电子与封装2026，Vol.26Issue(6)：67-78,12.DOI:10.16257/j.cnki.1681-1070.2026.0071
包含积累层沟道和4H-SiC/Si异质结集电区的SiC基RC-IGBT
SiC-Based RC-IGBT with Accumulation Layer Channel and 4H-SiC/Si Heterojunction Collector
摘要
Abstract
A silicon carbide enhancement-mode reverse-conducting insulated gate bipolar transistor integrating a heterojunction collector(HJC)and an accumulation layer channel(HJC-RC-ACCUIGBT)is devised.Instead of an inversion layer channel,an accumulation layer channel is adopted to enhance the channel mobility,thereby reducing the threshold voltage,specific on-resistance,and the adverse effects of gate oxide/channel interface states.A 4H-SiC/Si/4H-SiC HJC is employed in place of an n+4H-SiC homogeneous collector to block electron outflow,enhance conductance modulation,reduce the forward voltage drop,and eliminate the snapback phenomenon without compromising other electrical characteristics.The device's structure,as well as its static and dynamic electrical characteristics are simulated and optimized using TCAD software.The results show that,compared to a reference device with an inversion layer channel,this IGBT exhibits a 15％reduction in threshold voltage,a 32％increase in collector saturation current density,and a mitigated influence from gate oxide/channel interface states.Compared to a reference device without an HJC,this IGBT completely eliminates the snapback phenomenon,with the forward and reverse voltage drops reduced by 72％and 12％,respectively.The interface states of the HJC have no significant effect on the device's electrical characteristics.关键词
RC-IGBT/积累层沟道/4H-SiC/Si/4H-SiC异质结集电区/电压折回现象Key words
RC-IGBT/accumulation layer channel/4H-SiC/Si/4H-SiC heterojunction collector/snapback phenomenon分类
信息技术与安全科学引用本文复制引用
叶枝展,韦文生..包含积累层沟道和4H-SiC/Si异质结集电区的SiC基RC-IGBT[J].电子与封装,2026,26(6):67-78,12.基金项目
国家自然科学基金(62374116) （62374116）
