电子与封装2026，Vol.26Issue(6)：79-87,9.DOI:10.16257/j.cnki.1681-1070.2026.0025
BiCMOS与SOI工艺运算放大器的辐射敏感特性对比研究
Comparative Study on Radiation Sensitivity Characteristics of BiCMOS and SOI Process Operational Amplifiers
马毛旦 1王忠芳 2赵晓凡 1张涛 1丁宏宇 1韩朝阳1
作者信息
- 1. 贵州振华风光半导体股份有限公司,贵阳 550014
- 2. 贵州振华风光半导体股份有限公司,贵阳 550014||西安建筑科技大学信息与控制工程学院,西安 710311
- 折叠
摘要
Abstract
Focusing on the reliability issues of operational amplifiers in radiation environments,a systematic study is conducted on the radiation sensitivity characteristics of BiCMOS and SOI process operational amplifiers through pulsed laser single particle effect test platform and 60Co total ionizing dose irradiation test platform.In terms of single event transient(SET)sensitivity:the input stage SET threshold of the BiCMOS process operational amplifier is about 0.17 nJ,and its output pulse signal is related to the carrier migration mechanism;the SOI process operational amplifier,with its complementary differential structure,has a high SET threshold(0.47 nJ)for the input stage,but its buried oxide layer causes abnormal sensitivity between the intermediate and output stages(threshold as low as 0.02 nJ).In addition,the Miller capacitor in the BiCMOS operational amplifier introduces a low-pass filtering effect,resulting in SET pulse broadening and oscillation.In terms of total ionizing dose(TID)sensitivity:the BiCMOS process operational amplifier mainly exhibits bipolar transistor gain degradation and significant open-loop gain degradation(up to 21.3 dB);the SOI process operational amplifier experiences a sharp increase in input bias current(up to 120.4 nA)due to the accumulation of the buried oxide layer charges,while the gain degradation is relatively moderate.This study reveals the degradation laws and physical mechanisms of BiCMOS and SOI operational amplifiers under SET and TID effects,providing important experimental evidence for the process selection and hardening design of radiation-hardened integrated circuits intended for space and nuclear environments.关键词
运算放大器/单粒子瞬态效应/敏感节点/电离总剂量Key words
operational amplifier/single event transient effect/sensitive node/total ionizing dose分类
信息技术与安全科学引用本文复制引用
马毛旦,王忠芳,赵晓凡,张涛,丁宏宇,韩朝阳..BiCMOS与SOI工艺运算放大器的辐射敏感特性对比研究[J].电子与封装,2026,26(6):79-87,9.
