期刊信息/Journal information
：中国电子学会和中国科学院半导体研究所
：王守武
：月刊
：1674-4926
：11-5781/TN
：jos@semi.ac.cn
：010-82304277
：100083
：北京912信箱
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
Intramolecular spatial charge transfer enhances TADF efficiency
Baoyi Ren;Chuantian Zuo;Yaguang Sun;Liming Ding1-3
Fiber-like solar cells
Xing Fan;Dechun Zou;Liming Ding5-7
Defect engineering on all-inorganic perovskite solar cells for high efficiency
Bingcheng Yu;Chuantian Zuo;Jiangjian Shi;Qingbo Meng;Liming Ding9-11
Over 1 cm2 flexible organic solar cells
Wei Pan;Yunfei Han;Zhenguo Wang;Qun Luo;Changqi Ma;Liming Ding13-18
Efficient and photostable CsPbl2Br solar cells realized by adding PMMA
Yanbo Shang;Zhimin Fang;Wanpei Hu;Chuantian Zuo;Bairu Li;Xingcheng Li;Mingtai Wang;Liming Ding;Shangfeng Yang19-22
Drop-coating produces efficient CsPbl2Br solar cells
Hanrui Xiao;Chuantian Zuo;Fangyang Liu;Liming Ding23-25
Surface-enhanced Raman spectroscopy chips based on two-dimensional materials beyond graphene
Enqing Zhang;Zhengkun Xing;Dian Wan;Haoran Gao;Yingdong Han;Yisheng Gao;Haofeng Hu;Zhenzhou Cheng;Tiegen Liu27-36
Recent progress of physical failure analysis of GaN HEMTs
Xiaolong Cai;Chenglin Du;Zixuan Sun;Ran Ye;Haijun Liu;Yu Zhang;Xiangyang Duan;Hai Lu37-48
A crossover from Efros-Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures
S.Dlimi;A.El kaaouachi;L.Limouny;B.A.Hammou49-52
- 1
- 2