NTC and electrical properties of nickel and gold doped n-type silicon materialOA北大核心CSCDCSTPCD
NTC and electrical properties of nickel and gold doped n-type silicon material
iconductor deep level energy are basically consistent with the experimental results.
iconductor deep level energy are basically consistent with the experimental results.
Dong Maojin;Chen Zhaoyang;Fan Yanwei;Wang Junhua;Tao Mingde;Cong Xiuyun
Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,ChinaGraduate University of the Chinese Academy of Sciences,Beijing 100049,ChinaXinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,ChinaXinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,ChinaXinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,ChinaXinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,China
电子信息工程
deep level impuritiesnickelgoldNTCelectrical properties
deep level impuritiesnickelgoldNTCelectrical properties
《半导体学报》 2009 (8)
52-55,4
Project supported by the National High Technology Research and Development Program of China (No. 2006AA03Z434).
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