Influence of gate-source/drain misalignment on the performance of bulk FinFETsby a 3D full band Monte Carlo simulationOACSCDCSTPCD

作者：Wang Juncheng;Du Gang;Wei Kangliang;Zeng Lang;Zhang Xing;Liu Xiaoyan

作者单位：Institute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, China

中文关键词：bulk FinFET gate-source/drain misalignment 3D Monte Carlo simulation carrier transport

英文关键词：bulk FinFET gate-source/drain misalignment 3D Monte Carlo simulation carrier transport

刊名：《半导体学报（英文版）》 2013 (4)

页码/页数：42-45,4

基金：Project supported by the National Fundamental Basic Research Program of China (No.2011CBA00604).

DOI：10.1088/1674-4926/34/4/044005