基于沟槽型功率器件的三层掩膜板工艺设计OA北大核心CSTPCD
Technological design of three-layer mask technology based on trench type MOSFET
针对低压功率器件传统工艺流程进行创新和优化，以原有的6层掩膜板为基础，对掩膜板层数进行削减，用接触孔掩膜板完成原有的保护环掩膜板，工作区掩膜板及 N+区掩膜板的作用。器件的电性参数目标，通过设计具体工艺参数，并对其进行仿真，以验证工艺可行性。所用的参数与设计方案适用于所有低压功率器件生产制造。
The innovation and optimization for the traditional technology process of low⁃voltage power device were conduct⁃ed. Based on original six⁃layer mask,the mask layers were reduced. The functions of protecting ring mask,working area mask and N+ area mask are were replaced by the contact hole mask. The electrical parameters of the device were simulated by design⁃ing the specific technology technological parameters,the feasibility of the technology was veri…查看全部>>
王善屹;郭筝;楼颖颖;钱亮
上海交通大学 微电子学院，上海 200240上海交通大学 微电子学院，上海 200240上海华虹宏力半导体制造有限公司，上海 202103上海华虹宏力半导体制造有限公司，上海 202103
信息技术与安全科学
功率器件沟槽型功率器件掩膜板工艺仿真
power devicetrench MOSFETmasktechnology simulation
《现代电子技术》 2015 (20)
146-149,153,5
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