空气动力学学报2024，Vol.42Issue(4)：96-104,9.DOI:10.7638/kqdlxxb-2023.0161
SiC界面热化学反应演化响应机理研究
Evolution and response mechanisms of interfacial thermochemical reactions for silicon carbide materials
曹盈菲 1叶致凡 2汤巨 1赵瑾 2文东升3
作者信息
- 1. 北京航空航天大学国际通用工程学院,北京 100191
- 2. 北京航空航天大学航空科学与工程学院,北京 100191
- 3. 北京航空航天大学国际通用工程学院,北京 100191||北京航空航天大学航空科学与工程学院,北京 100191
- 折叠
摘要
Abstract
Ultra-high temperature ceramics are one of the ideal potential materials for thermal protection in extremely high-temperature environments.Silicon carbide,owing to its exceptional mechanical and thermal performance,becomes a research hotspot in the area of ceramic matrix or oxidation-resistant coatings,significantly enhancing the oxidation and ablation resistance of thermal protection materials.However,the complex mechanisms of thermal response and evolution for the silicon carbide interface in the high-temperature boundary layer remain unclear,limiting its further modification in thermal protection system design.Reactive molecular dynamics(RMD)simulation method based on the reactive force field,provides new possibilities for investigating the complex interface evolution and thermal response mechanisms of silicon carbide at the atomic scale.In this study,the interfacial evolution of silicon carbide is investigated by employing the RMD simulation method,and the thermal response mechanism is explored under various temperature and pressure conditions,including the oxidation and sublimation phenomena,etc.Moreover,the oxidation rate,sublimation rate and material ablation rates are further calculated under typical operating conditions.Through comparing the calculated ablation recession rate with experimental results from literatures,a relative error within 10%is revealed,verifying the feasibility of applying RMD method in quantitative calculation of thermochemical reactions at the material interface.关键词
反应分子动力学/高温界面/SiC/热防护材料/烧蚀Key words
reactive molecular dynamics/high-temperature interface/silicon carbide/thermal protection material/ablation分类
航空航天引用本文复制引用
曹盈菲,叶致凡,汤巨,赵瑾,文东升..SiC界面热化学反应演化响应机理研究[J].空气动力学学报,2024,42(4):96-104,9.
