Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical ParameterOACSTPCDEI
Compared to Si devices,the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material.This paper proposes a practical SiC MOSFET jun…查看全部>>
Han Cao;Puqi Ning;Yunhao Huang;Xuhui Wen
Wuhan Second Ship Design and Research Institute,Wuhan 430205,ChinaKey Laboratory of Power Electronics and Electric Drive,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China University of Chinese Academy of Sciences,Beijing 100049,China Collaborative Innovation Center of Electric Vehicles in Beijing,Beijing 100081,ChinaKey Laboratory of Power Electronics and Electric Drive,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China University of Chinese Academy of Sciences,Beijing 100049,China Collaborative Innovation Center of Electric Vehicles in Beijing,Beijing 100081,ChinaKey Laboratory of Power Electronics and Electric Drive,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China University of Chinese Academy of Sciences,Beijing 100049,China Collaborative Innovation Center of Electric Vehicles in Beijing,Beijing 100081,China
动力与电气工程
Junction temperatureSilicon Carbide(SiC)MOSFETTSEP
《CSEE Journal of Power and Energy Systems》 2024 (4)
P.1799-1807,9
supported by the National Key R&D Program of China(2016YFB0100600)the Key Program of Bureau of Frontier Sciences and Education,Chinese Academy of Sciences(QYZDBSSW-JSC044)。
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