高剂量中子辐照6H-SiC晶体的退火特性OA北大核心CSCDCSTPCD
Annealing Characteristics of Heavy Neutron-irradiated 6H-SiC Crystal
在温度为60～80℃的条件下用剂量为1.72×1019n/crm2的中子对6H-SiC晶体进行了辐照,利用X射线衍射等方法观测了中子辐照引起的缺陷及其恢复.重点追踪6H-SiC的(006)、(0012)晶面的衍射峰并进行实验观测.中子辐照对晶体造成了严重的损伤,使其内部产生了大量的缺陷,在某些被测晶面甚至出现非晶化.通过等时退火,缺陷逐渐消失,晶格开始恢复,其恢复特性由退火温度决定.通过X射线衍射峰的峰高和峰型发现,在温度低于600℃时,辐照损伤…查看全部>>
6H-S1C single crystals were irradiated at approximately 60-80 ℃ to a neutron fluence of 1. 72 × 10 9 n/cm2 . The radiation damage and the defect recovery in the single crystals were investigated by X-ray diffraction meter. Focus on tracking diffraction peak of the plane (006) , (0012) of 6H-SiC single crystals. The experimental observation on diffraction peaks of different crystal faces shows that there are serious damages in the neutron-irradiated 6H-SiC c…查看全部>>
祝威;阮永丰;陈敬;马鹏飞;王鹏飞;黄丽
天津大学理学院,天津300072天津商业大学理学院,天津300134天津大学理学院,天津300072天津大学理学院,天津300072河南师范大学,新乡453007天津大学理学院,天津300072
通用工业技术
6H-SiC中子辐照缺陷X射线衍射
6H-SiCneutron-irradiationdefectX-ray diffraction
《硅酸盐通报》 2012 (2)
386-390,5
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