Temperature dependence of latch-up effects in CMOS inverter induced by high power microwaveOACSCDCSTPCD
Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave
Yu Xinhai;Chai Changchun;Ren Xingrong;Yang Yintang;Xi Xiaowen;Liu Yang
School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
complementary metal oxide semiconductor high power microwave latch-up thermal effect temperature dependence
complementary metal oxide semiconductor high power microwave latch-up thermal effect temperature dependence
《半导体学报（英文版）》 2014 (8)
半导体器件与电路的“响应型”损伤机理与实验研究
115-120,6
Project supported by the National Natural Science Foundation of China (No.60776034) and the State Key Development Program for Basic Research of China (No.2014CC339900).
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