Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dotsOACSCDCSTPCD
Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots
Dandan Ning;Yanan Chen;Xinkun Li;Dechun Liang;Shufang Ma;Peng Jin;Zhanguo Wang
Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi'an 710021,ChinaKey Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaKey Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaCenter of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaBeijing Institute of Aerospace Control Instruments,Beijing 100039,ChinaBeijing Institute of Aerospace Control Instruments,Beijing 100039,ChinaInstitute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi'an 710021,China
quantum dotsrapid thermal annealingphotoluminescencespectral width
quantum dotsrapid thermal annealingphotoluminescencespectral width
《半导体学报（英文版）》 2020 (12)
1-6,6
This work was supported by the National Key Research and Development Program of China (Grant No.2016YFB0402404),the National Natural Science Foundation of China (Grant No.21972103),Key Research and Development Program of Shanxi Province (Grant No.201703D111026),and the Beijing Municipal Science and Technology Commission (Grant No.Z181100004418009).
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