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镍基阵列微针的薄胶微电铸制备工艺

王华安 李晓建 尹鹏和 宋佳忻 张宇 梁军生

光学精密工程2024,Vol.32Issue(16):2492-2503,12.
光学精密工程2024,Vol.32Issue(16):2492-2503,12.DOI:10.37188/OPE.20243216.2492

镍基阵列微针的薄胶微电铸制备工艺

Preparation of Ni microneedle array using thin photoresist microelectroforming technique

王华安 1李晓建 1尹鹏和 1宋佳忻 1张宇 1梁军生2

作者信息

  • 1. 大连理工大学 辽宁省微纳米技术及系统重点实验室,辽宁 大连 116024
  • 2. 大连理工大学 辽宁省微纳米技术及系统重点实验室,辽宁 大连 116024||大连理工大学 高性能精密制造全国重点实验室,辽宁 大连 116024
  • 折叠

摘要

Abstract

With the advantages of high mechanical strength and good electrical conductivity,Ni micronee-dle arrays are widely used in bioengineering and other fields.By virtue of the advantages of high replication accuracy and wide adaptability,the microelectroforming technique has become a reliable method for prepar-ing Ni microneedles.However,it is usually necessary to use photoresist template with the same thickness as that of the casting layer in the microelectroforming technique.Thick photoresist microelectroforming faces problems such as residual photoresist at the microstructure,difficulty in removing the photoresist.In order to solve the above problems,obtain Ni microneedle arrays with tip curvature radius on the nanome-ter scale,the fabrication process for Ni microneedle arrays based on the thin photoresist microelectroform-ing technique was designed and experimentally verified.First,a silicon template with arrays of pits was fabricated on(100)single crystal silicon wafers.Next,a Ni seed layer with a thickness of 200 nm was sputtered onto the surface of the silicon template.Then,a thin photoresist template of the microneedle support beam was prepared using the photolithography technique.Finally,Ni microneedle arrays were re-leased after microelectroforming.The experimental results show that Ni microneedle arrays with an aver-age deviation in size of 1.7 μm,an average deviation in absolute position of 1.8 μm,and an average curva-ture radius of 150 nm at the tip were obtained by this method without damaging the silicon template.Using RFJ-60 negative photoresist as a template for microelectroforming with a thickness of-2 μm,microneedle support beams with a thickness of-24.3 μm were successfully prepared.Ni microneedle relative dimen-sional error was reduced to 1%by compensating SiO2 lateral erosion into lithographic mask.Combining the microelectroforming technique and the anisotropic etching property of monocrystalline silicon,the Ni microneedle array can be prepared with high quality and high efficiency,which lays the foundation for the batch preparation of Ni microneedle arrays.

关键词

阵列镍微针/硅模具/微电铸工艺/侧蚀量补偿

Key words

Ni microneedle array/silicon template/microelectroforming technique/lateral erosion com-pensation

分类

电子信息工程

引用本文复制引用

王华安,李晓建,尹鹏和,宋佳忻,张宇,梁军生..镍基阵列微针的薄胶微电铸制备工艺[J].光学精密工程,2024,32(16):2492-2503,12.

基金项目

国家自然科学基金(No.51675085) (No.51675085)

中央高校基本科研业务费项目(No.DUT22YG214) (No.DUT22YG214)

光学精密工程

OA北大核心CSTPCD

1004-924X

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