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Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrateOACSTPCDEI

中文摘要

Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are comprehensivel…查看全部>>

Yehua Tang;Yuchao Wang;Chunlan Zhou;Ke-Fan Wang

Electrical and Energy Engineering Department,Nantong Institute of Technology,Nantong 226000,ChinaNingxia Research Center of Silicon Target and Silicon-Carbon Negative Materials Engineering Technology,School of Materials Science and Engineering,North Minzu University,Yinchuan 750021,China Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100049,ChinaInstitute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100049,China School of Engineering Science,University of Chinese Academy of Sciences,Beijing 100049,ChinaHenan Key Laboratory of Quantum Materials and Quantum Energy,School of Future Technology,Henan University,Kaifeng 475004,China

电子信息工程

polysilicon filmboron dopingammonium tetraborate tetrahydrate(ATT)electrical propertiescrystallization

《Journal of Semiconductors》 2024 (10)

P.60-68,9

support given by the Natural Science Foundation of Nantong(Grant NO.JC2023065)the Research Program of Nantong Institute of Technology(Grant NO.2023XK(B)07).

10.1088/1674-4926/24030032

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