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Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate

Yehua Tang Yuchao Wang Chunlan Zhou Ke-Fan Wang

Journal of Semiconductors2024，Vol.45Issue(10)：P.60-68,9.

Journal of Semiconductors2024，Vol.45Issue(10)：P.60-68,9.DOI:10.1088/1674-4926/24030032

Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate

Yehua Tang ¹Yuchao Wang ²Chunlan Zhou ³Ke-Fan Wang⁴

作者信息

1. Electrical and Energy Engineering Department,Nantong Institute of Technology,Nantong 226000,China
2. Ningxia Research Center of Silicon Target and Silicon-Carbon Negative Materials Engineering Technology,School of Materials Science and Engineering,North Minzu University,Yinchuan 750021,China Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100049,China
3. Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100049,China School of Engineering Science,University of Chinese Academy of Sciences,Beijing 100049,China
4. Henan Key Laboratory of Quantum Materials and Quantum Energy,School of Future Technology,Henan University,Kaifeng 475004,China
折叠

摘要

关键词

polysilicon film/boron doping/ammonium tetraborate tetrahydrate(ATT)/electrical properties/crystallization

分类

信息技术与安全科学

引用本文复制引用

Yehua Tang,Yuchao Wang,Chunlan Zhou,Ke-Fan Wang..Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate[J].Journal of Semiconductors,2024,45(10):P.60-68,9.

基金项目

support given by the Natural Science Foundation of Nantong(Grant NO.JC2023065) （Grant NO.JC2023065）

the Research Program of Nantong Institute of Technology(Grant NO.2023XK(B)07). （Grant NO.2023XK(B）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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