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期刊信息/Journal information
Journal of Materiomics

中国硅酸盐学会

Jing-Feng Li;Samuel S. Mao;Cewen Nan

双月刊

2352-8478

10-1466/TQ

jmat@ceramsoc.com

100831

北京海淀区三里河路11号

Journal of Materiomics/Journal 无机材料学学报(英文)
The Journal of Materiomics aims to provide a continuous forum for the dissemination of research in t...展开全部>>
正式出版
收录年代
    2025年06期Issue 06,2025

    Effective long-term storage and repeatable mechanoluminescence of piezoelectrics LiNbO_(3):1%Pr^(3+),0.5%Zn^(2+)

    Xiaoyu Yao;Lin Li;Wei Liu;Wenqi Wei;Minhong Jiang;Xiaojiang Mu;Jingtai Zhao;Guanghui Rao;P.166-175

    MgeGa layered double hydroxides coating endow magnesium with antibacterial and osteogenic properties for guided-bone regeneration application

    Kui Xue;Min Xing;Tiantian Chen;Bingyun Xi;Haifeng Zhang;Kuicai Ye;Jiayin Feng;Wenhao Qian;Jiajun Qiu;Xuanyong Liu;P.150-165

    Reduced coercive field and enhanced ferroelectric polarization of Hf_(0.5)Zr_(0.5)O_(2) film through electric-field-assisted rapid annealing

    Jiachen Li;Weijin Pan;Zhengxu Zhu;Hansheng Zhu;Yuchen Wang;Shengchun Shen;Yuewei Yin;Xiaoguang Li;P.38-44

    Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf_(0.5)Zr_(0.5)O_(2) thin films

    Seong Jae Shin;Hani Kim;Seungyong Byun;Jonghoon Shin;Jinwoo Choi;Suk Hyun Lee;Kyung Do Kim;Jae Hee Song;Dong Hoon Shin;Soo Hyung Lee;In Soo Lee;Hyunwoo Nam;Cheol Seong Hwang;P.235-244

    HfO_(2)-based thin filmsand devices

    Xiaoguang Li;Min Hyuk Park;Ji-Yan Dai;Yuewei Yin;P.313-315

    Engineering phase transition and ferroelectric properties in acceptor-doped HfO_(2)/SrRuO_(3) thin-film heterostructures by a charge-balance synergistic strategy

    Yuhao Yue;Xixiang Jing;Weijie Zheng;Jiufu Li;Chunyan Zheng;Xiaoli Fan;Kepeng Song;Tengfei Cao;Zheng Wen;P.303-312

    Controlled doping and growth of SnSe thin films via pulsed laser deposition

    Hang Yin;Hongyao Xie;Dezheng Gao;Shulin Bai;Jingying Shi;Ping Fu;Li-Dong Zhao;Can Li;P.293-302

    Development of n-type Ti_(2)CoNiSb_(2) double half-Heusler compound by the breaking of valence-balanced rule and achieving high thermoelectric performance via Bi/Cu co-doping

    Rahidul Hasan;Seungki Jo;Seung Yong Lee;Yan Gu;Kyung Tae Kim;Dong Won Chun;Sang-il Kim;Hyun-Sik Kim;Kyu Hyoung Lee;P.274-285

    Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

    Kun Yang;Hyojun Choi;Ji Sang Ahn;Eun Ji Ju;Dong In Han;Se Hyun Kim;Ju Yong Park;Heejin Hong;Kwan Hyun Park;Jeong Hwan Han;Min Hyuk Park;P.263-273

    Enhancing ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2) thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

    Han Sol Park;Joong Chan Shin;Kyung Do Kim;Seong Jae Shin;Jae Hee Song;Seung Kyu Ryoo;In Soo Lee;Suk Hyun Lee;Hyunwoo Nam;Cheol Seong Hwang;P.252-262