期刊信息/Journal information
：中国电子学会和中国科学院半导体研究所
：王守武
：月刊
：1674-4926
：11-5781/TN
：jos@semi.ac.cn
：010-82304277
：100083
：北京912信箱
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
Bio-inspired spectral adaptive visual devices:A new paradigm for structure-defined functionality
Youyou Bao;Yuhan Zhao;Daixuan Wu;He Tian前插1
Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers
Tong Xu;Hui Yang;Xianfei Zhang;Zhuangpeng Guo;Peng Chen;Meixin Feng;Xiujian Sun;Rui Xi;Xinchao Li;Shuming Zhang;Qian Sun;Xiaoqi Yu;Kanglin Xiong5-8
Nucleation control for the growth of two-dimensional single crystals
Jinxia Bai;Chi Zhang;Fankai Zeng;Jinzong Kou;Jinhuan Wang;Xiaozhi Xu9-18
Dynamic avalanche reliability enhancement of FS-IGBT under unclamped inductive switching
Jingping Zhang;Houcai Luo;Huan Wu;Bofeng Zheng;Xianping Chen19-31
A 128×128 monolithic spike-based hybrid-vision sensor with 0.96 Geps and 117 kfps
Huanhui Zhang;Peng Feng;Liyuan Liu;Chi Zhang;Xu Yang;Zhe Wang;Cong Shi;Runjiang Dou;Shuangming Yu;Jian Liu;Nanjian Wu32-40
Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80%for far-UVC LEDs
Jiale Peng;Xiaojuan Sun;Dabing Li;Ke Jiang;Shanli Zhang;Jianwei Ben;Kexi Liu;Ziyue Qin;Ruihua Chen;Chunyue Zhang;Shunpeng Lv41-49
AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties
Zhizhong Wang;Dabing Li;Xiao Wei Sun;Zi-Hui Zhang;Jingting He;Fuping Huang;Xuchen Gao;Kangkai Tian;Chunshuang Chu;Yonghui Zhang;Shuting Cai;Xiaojuan Sun50-61
GaN diodes comparative study for high energy protons detection
Matilde Siviero;Maxime Hugues;Lucas Lesourd;Eric Frayssinet;Shirley Prado de la Cruz;Sebastien Chenot;Johan-Petter Hofverberg;Marie Vidal;Jean-Yves Duboz62-69
Self-assembled flexible Ti3C2Tx MXene-based thermally chargeable supercapacitor
Lifeng Wu;La Li;Guozhen Shen70-76
Improving electrical performance and fringe effect in p-type SnOx thin film transistors via Ta incorporation
Yu Song;Runtong Guo;Ruohao Hong;Rui He;Xuming Zou;Benjamin Iñiguez;Denis Flandre;Lei Liao;Guoli Li77-85
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