AlGaN/GaN 高电子迁移率晶体管漏电流退化机理研究*OA北大核心CSCDCSTPCD
Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors*
本文首先制备了与 AlGaN/GaN 高电子迁移率晶体管(HEMT)结构与特性等效的 AlGaN/GaN 异质结肖特基二极管，采用步进应力测试比较了不同栅压下器件漏电流的变化情况，然后基于电流-电压和电容-电压测试验证了退化前后漏电流的传输机理，并使用失效分析技术光发射显微镜(EMMI)观测器件表面的光发射，研究了漏电流的时间依赖退化机理。实验结果表明：在栅压高于某临界值后，器件漏电流随时间开始增加，同时伴有较大的噪声。将极化电场引入电流与电…查看全部>>
In order to study the degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated AlGaN/GaN heterojunction Schottky diodes having equivalent structure and characteristics to AlGaN/GaN HEMTs. Step stress tests were then performed to compare the leakage current changes at different gate voltages. The transport mechanism of leakage current before and after degradation was validated based on the current-…查看全部>>
任舰;闫大为;顾晓峰
轻工过程先进控制教育部重点实验室，江南大学电子工程系，无锡 214122轻工过程先进控制教育部重点实验室，江南大学电子工程系，无锡 214122轻工过程先进控制教育部重点实验室，江南大学电子工程系，无锡 214122
AlGaN/GaN高电子迁移率晶体管漏电流退化机理
AlGaN/GaNhigh electron mobility transistorleakage currentdegradation mechanism
《物理学报》 2013 (15)
单量子点微纳机电器件的制备与器件物理研究
1-6,6
国家自然科学基金(批准号:11074280)、江苏省自然科学基金(批准号：BK2012110)、中央高校基本科研业务费专项资金(批准号:JUSRP51323B, JUDCF13038)、江苏高校优势学科建设工程项目、江苏省六大人才高峰项目(批准号：DZXX-053)和江苏省普通高校研究生创新计划(批准号：CXLX13-740)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant No.11074280), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012110), the Fundamental Research Funds for the Central Universities (Grant Nos. JUSRP51323B, JUDCF13038), PAPD of Jiangsu Higher Education Institutions, the Summit of the Six Top Talents Program of Jiangsu Province, China (Grant No. DZXX-053), and the Graduate Student Innovation Program for University of Jiangsu Province (Grant No. CXLX13-740)
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