期刊信息/Journal information
：中国电子学会和中国科学院半导体研究所
：王守武
：月刊
：1674-4926
：11-5781/TN
：jos@semi.ac.cn
：010-82304277
：100083
：北京912信箱
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
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DASP: Defect and Dopant ab-initio Simulation Package
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Janus VXY monolayers with tunable large Berry curvature
Wenrong Liu;Xinyang Li;Changwen Zhang;Shishen Yan;P.96-111
Frontier applications of perovskites beyond photovoltaics
Luyao Mei;Haoran Mu;Lu Zhu;Shenghuang Lin;Lixiu Zhang;Liming Ding;P.10-12
Recent progress on advanced transmission electron microscopy characterization for halide perovskite semiconductors
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Structural evolution of low-dimensional metal oxide semiconductors under external stress
Peili Zhao;Lei Li;Guoxujia Chen;Xiaoxi Guan;Ying Zhang;Weiwei Meng;Ligong Zhao;Kaixuan Li;Renhui Jiang;Shuangfeng Jia;He Zheng;Jianbo Wang;P.60-66
In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes
Zhen Fang;Yao Liu;Chengyi Song;Peng Tao;Wen Shang;Tao Deng;Xiaoqin Zeng;Jianbo Wu;P.46-59
In-situ/operando characterization techniques for organic semiconductors and devices
Sai Jiang;Qinyong Dai;Jianhang Guo;Yun Li;P.13-23
Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography
Luying Li;Yongfa Cheng;Zunyu Liu;Shuwen Yan;Li Li;Jianbo Wang;Lei Zhang;Yihua Gao;P.36-45
Comprehensive, in operando, and correlative investigation of defects and their impact on device performance
Yong Zhang;David J.Smith;P.24-35
Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices
Xiaoxing Ke;Yong Zhang;P.1-2
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