|国家科技期刊平台
期刊信息/Journal information
半导体学报(英文版)

中国电子学会和中国科学院半导体研究所

王守武

月刊

1674-4926

11-5781/TN

jos@semi.ac.cn

010-82304277

100083

北京912信箱

0

0

半导体学报(英文版)/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办,中国科学院半导体研究所承办的学术刊物,报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展,被EI、CA、SA等收录,在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
正式出版
收录年代
    2024年04期

    Millimeter-wave PA design techniques in ISSCC 2024

    Yun Wang;Hongtao Xu16-18

    Light-emitting devices based on atomically thin MoSe2

    Xinyu Zhang;Jingzhi Shang;Xuewen Zhang;Hanwei Hu;Vanessa Li Zhang;Weidong Xiao;Guangchao Shi;Jingyuan Qiao;Nan Huang;Ting Yu19-35

    Countermeasure against blinding attack for single-photon detectors in quantum key distribution

    Lianjun Jiang;Houlin Fang;Rui Ma;Lei Cheng;Weifeng Yang;Songtao Han;Shibiao Tang;Dongdong Li;Yuqiang Fang;Meisheng Zhao;Ming Liu;Zhilin Xie;Yukang Zhao;Yanlin Tang;Wei Jiang77-82

    Chemical vapor deposition for perovskite solar cells and modules

    Zhihao Tao;Yuxuan Song;Baochang Wang;Guoqing Tong;Liming Ding1-4

    Highlights in recent wireless power IC research

    Cheng Huang;Junyao Tang5-7

    Recent advancements in continuously scalable conversion-ratio switched-capacitor converter

    Mo Huang;Yuanfei Wang;Rui P.Martins;Yan Lu8-11

    Towards efficient generative AI and beyond-AI computing:New trends on ISSCC 2024 machine learning accelerators

    Bohan Yang;Jia Chen;Fengbin Tu12-15

    Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2

    Fei Sun;Yi Peng;Guoqiang Zhao;Xiancheng Wang;Zheng Deng;Changqing Jin36-41

    On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

    Peng Yuan;Jinjuan Xiang;Guilei Wang;Chao Zhao;Yuting Chen;Liguo Chai;Zhengying Jiao;Qingjie Luan;Yongqing Shen;Ying Zhang;Jibin Leng;Xueli Ma42-47

    Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

    Nuo Xu;Gaoqiang Deng;Haotian Ma;Shixu Yang;Yunfei Niu;Jiaqi Yu;Yusen Wang;Jingkai Zhao;Yuantao Zhang48-55