Influence of growth temperatures on the quality of lnGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy*OACSCDCSTPCD
Influence of growth temperatures on the quality of lnGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy*
Molecular beam epitaxy growth of an InxGat_xAs/GaAs quantum well (QW) structure (x equals to 0.17 or 0.3) on offcut (100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence (PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains. During the subsequent growth of the GaAs buffer layer…查看全部>>
He Jifang;Shang Xiangjun;Li Mifeng;Zhu Yan;Chang Xiuying;Ni Haiqiao;Xu Yingqiang;Niu Zhichuan
Ge substrate InGaAs/GaAs quantum well molecular beam epitaxy
Ge substrate InGaAs/GaAs quantum well molecular beam epitaxy
《半导体学报》 2011 (4)
超晶格与量子阱半导体材料
39-43,5
Project supported by the National Natural Science Foundation of China (No.60625405) and the National Basic Research Program of China(Nos.2007CB936304,2010CB327601).
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