A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxyOACSCDCSTPCD

作者：Dai Pan;Lu Shulong;Ji Lian;He Wei;Bian Lifeng;Yang Hui;M.Arimochi

作者单位：Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

中文关键词：molecular beam epitaxy Ⅲ-Ⅴ semiconductor PN junction solar cell

英文关键词：molecular beam epitaxy Ⅲ-Ⅴ semiconductor PN junction solar cell

刊名：《半导体学报（英文版）》 2013 (10)

相关项目：内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究

页码/页数：62-65,4

基金：Project supported by the National Natural Science Foundation of China (No.61176128) and the SINANO-SONY Joint Program,China (No.Y1AAQ11002).

DOI：10.1088/1674-4926/34/10/104006