Design and fabrication of a 3.3 kV 4H-SiC MOSFETOACSCDCSTPCD
Design and fabrication of a 3.3 kV 4H-SiC MOSFET
Huang Runhua;Tao Yonghong;Bai Song;Chen Gang;Wang Ling;Liu Ao;Wei Neng
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, China
4H-SiCMOSFETinterface state
4H-SiCMOSFETinterface state
《半导体学报(英文版)》 2015 (9)
54-57,4
Project supported by the National High Technology Research and Development Program of China (No.2014AA052401).
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