期刊信息/Journal information
中国电子学会和中国科学院半导体研究所
王守武
月刊
1674-4926
11-5781/TN
jos@semi.ac.cn
010-82304277
100083
北京912信箱
0
0
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
All-optical switching based on self-assembled halide perovskite microwires
Qing Zhang;Jun Zhang15-17
Twist-angle two-dimensional superlattices and their application in (opto)electronics
Kaiyao Xin;Xingang Wang;Kasper Grove-Rasmussen;Zhongming Wei23-41
A 357.9 nm GaN/AIGaN multiple quantum well ultraviolet laser diode
Jing Yang;Degang Zhao;Zongshun Liu;Feng Liang;Ping Chen;Lihong Duan;Hai Wang;Yongsheng Shi19-21
Anisotropic 2D materials for post-Moore photoelectric devices
Dingdong Xie;Jie Jiang;Liming Ding1-3
F-containing cations improve the performance of perovskite solar cells
Qin Zhou;Chuantian Zuo;Zilong Zhang;Peng Gao;Liming Ding5-9
Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation
Yongbo Liu;Huilong Zhu;Yongkui Zhang;Xiaolei Wang;Weixing Huang;Chen Li;Xuezheng Ai;Qi Wang89-97
Frequency dependence on polarization switching measurement in ferroelectric capacitors
Zhaomeng Gao;Shuxian Lyu;Hangbing Lyu99-103
Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
Tianyi Tang;Tian Yu;Guanqing Yang;Jiaqian Sun;Wenkang Zhan;Bo Xu;Chao Zhao;Zhanguo Wang55-61
High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission
K.S.Zhuravlev;A.L.Chizh;K.B.Mikitchuk;A.M.Gilinsky;I.B.Chistokhin;N.A.Valisheva;D.V.Dmitriev;A.I.Toropov;M.S.Aksenov63-67
Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films
R.Rahaman;M.Sharmin;J.Podder79-88
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