期刊信息/Journal information
：中国电子学会和中国科学院半导体研究所
：王守武
：月刊
：1674-4926
：11-5781/TN
：jos@semi.ac.cn
：010-82304277
：100083
：北京912信箱
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
All-optical switching based on self-assembled halide perovskite microwires
Qing Zhang;Jun Zhang15-17
A 357.9 nm GaN/AIGaN multiple quantum well ultraviolet laser diode
Jing Yang;Degang Zhao;Zongshun Liu;Feng Liang;Ping Chen;Lihong Duan;Hai Wang;Yongsheng Shi19-21
Frequency dependence on polarization switching measurement in ferroelectric capacitors
Zhaomeng Gao;Shuxian Lyu;Hangbing Lyu99-103
Anisotropic 2D materials for post-Moore photoelectric devices
Dingdong Xie;Jie Jiang;Liming Ding1-3
F-containing cations improve the performance of perovskite solar cells
Qin Zhou;Chuantian Zuo;Zilong Zhang;Peng Gao;Liming Ding5-9
Alkali metal cation engineering in organic/inorganic hybrid perovskite solar cells
Jilin Wang;Ruibin Tang;Lixiu Zhang;Fei Long;Disheng Yao;Liming Ding11-13
Twist-angle two-dimensional superlattices and their application in (opto)electronics
Kaiyao Xin;Xingang Wang;Kasper Grove-Rasmussen;Zhongming Wei23-41
Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation
Lixing Zhou;Jinjuan Xiang;Xiaolei Wang;Wenwu Wang43-54
Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
Tianyi Tang;Tian Yu;Guanqing Yang;Jiaqian Sun;Wenkang Zhan;Bo Xu;Chao Zhao;Zhanguo Wang55-61
High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission
K.S.Zhuravlev;A.L.Chizh;K.B.Mikitchuk;A.M.Gilinsky;I.B.Chistokhin;N.A.Valisheva;D.V.Dmitriev;A.I.Toropov;M.S.Aksenov63-67
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