期刊信息/Journal information
中国电子学会和中国科学院半导体研究所
王守武
月刊
1674-4926
11-5781/TN
jos@semi.ac.cn
010-82304277
100083
北京912信箱
0
0
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
Recent progress and future prospects of high-entropy materials for battery applications
Wenbo Qiu;Zidong Wang;Shijiang He;Huaping Zhao;Yong Lei;P.4-8
Behavior of exciton in direct−indirect band gap Al_(x)Ga_(1−x)As crystal lattice quantum wells
Yong Sun;Wei Zhang;Shuang Han;Ran An;Xin-Sheng Tang;Xin-Lei Yu;Xiu-Juan Miao;Xin-Jun Ma;Xianglian;Pei-Fang Li;Cui-Lan Zhao;Zhao-Hua Ding;Jing-Lin Xiao;P.64-70
2D black arsenic phosphorous
Junchuan Liang;Yi Hu;Liming Ding;Zhong Jin;P.1-3
GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits
Tingting Shi;Yuanbin Fan;Zhengyu Yan;Lai Zhou;Yang Ji;Zhiliang Yuan;P.71-75
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
NicolòZagni;Manuel Fregolent;Andrea Del Fiol;Davide Favero;Francesco Bergamin;Giovanni Verzellesi;Carlo De Santi;Gaudenzio Meneghesso;Enrico Zanoni;Christian Huber;Matteo Meneghini;Paolo Pavan;P.45-52
Development of in situ characterization techniques in molecular beam epitaxy
Chao Shen;Wenkang Zhan;Manyang Li;Zhenyu Sun;Jian Tang;Zhaofeng Wu;Chi Xu;Bo Xu;Chao Zhao;Zhanguo Wang;P.9-32
Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
Jin Sui;Jiaxiang Chen;Haolan Qu;Yu Zhang;Xing Lu;Xinbo Zou;P.58-63
975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings
Zhenwu Liu;Li Zhong;Suping Liu;Xiaoyu Ma;P.38-44
Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer deposition
Shuyu Wu;Rongrong Cao;Hao Jiang;Yu Li;Xumeng Zhang;Yang Yang;Yan Wang;Yingfen Wei;Qi Liu;P.33-37
A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
Chao Feng;Xinyue Dai;Qimeng Jiang;Sen Huang;Jie Fan;Xinhua Wang;Xinyu Liu;P.53-57
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