期刊信息/Journal information
：中国电子学会和中国科学院半导体研究所
：王守武
：月刊
：1674-4926
：11-5781/TN
：jos@semi.ac.cn
：010-82304277
：100083
：北京912信箱
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
Bonding at the atomic limit:redefining contacts in two-dimensional semiconductors
Bei Zhao;Xidong Duan1-4
Ultrathin van der Waals ferroelectric oxides for scalable low-power memory
Xiaokun Qin;Bowen Zhong;Zheng Lou;Lili Wang9-12
Electrohydrodynamic inkjet printing of perovskite quantum dots for color-conversion micro-LED displays
Chenyun Lin;Xiaotong Fan;Yuxuan Gu;Siting Cai;Zhong Chen;Shuli Wang;Yue Lin45-57
Transport mechanism of oxide-based programmable diode
Junru Qu;Wentai Xia;Jifang Cao;Xueyang Li;Ran Cheng;Dong Liu;Bing Chen58-64
Effects of cell topology and JFET width on depletion layer of SiC MOSFET
Bofeng Zheng;Houcai Luo;Huan Wu;Jingping Zhang;Xianping Chen65-76
p-GaN HEMT current reference and current mirror for high temperature application
Pingyu Cao;Kepeng Zhao;Zhengxuan Li;Yihao Xu;Ping Zhang;Harm Van Zalinge;Miao Cui;Fei Xue93-101
Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices:role of hydrogen in the passivation layer
Shilong Gou;Wuying Ma;Zhibin Yao;Zujun Wang;Jiangkun Sheng;Yuanyuan Xue77-85
Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures
Arely Vázquez Jiménez;Mario Moreno Moreno;Liliana Palacios Huerta;Pedro Rosales Quintero;Alfredo Morales Sánchez108-115
Broadband self-powered photodetector enabled by a MOF/organic heterojunction architecture
Mingke Yu;Huiyan Zheng;Yutao Xiong;Hong Wang;Yanghui Liu;Gang Liu144-153
Mitigating phosphonic acid-perovskite interfacial degradation via molecular engineering for ultra-stable solar cells
Xu Li;Yuxiao Guo;Xin Luo;Haoyuan Yan;Bo Xu13-17
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