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半导体学报(英文版)

中国电子学会和中国科学院半导体研究所

王守武

月刊

1674-4926

11-5781/TN

jos@semi.ac.cn

010-82304277

100083

北京912信箱

0

0

半导体学报(英文版)/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办,中国科学院半导体研究所承办的学术刊物,报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展,被EI、CA、SA等收录,在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
正式出版
收录年代
    2024年01期

    Editorial Board

    P.I0001-I0001

    Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance

    Yang Feng;Zhaohui Sun;Yueran Qi;Xuepeng Zhan;Junyu Zhang;Jing Liu;Masaharu Kobayashi;Jixuan Wu;Jiezhi Chen;P.33-37

    Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights

    Guang Yang;Lingbo Xu;Can Cui;Xiaodong Pi;Deren Yang;Rong Wang;P.42-47

    Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

    Jun Fang;Fan Zhang;Wenxian Yang;Aiqin Tian;Jianping Liu;Shulong Lu;Hui Yang;P.48-54

    Effect of drying methods on perovskite films and solar cells

    Ling Liu;Chuantian Zuo;Guang-Xing Liang;Hua Dong;Jingjing Chang;Liming Ding;P.1-5

    Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb

    Zhi Deng;Hailong Wang;Qiqi Wei;Lei Liu;Hongli Sun;Dong Pan;Dahai Wei;Jianhua Zhao;P.16-21

    240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

    Shunpeng Lu;Jiangxiao Bai;Hongbo Li;Ke Jiang;Jianwei Ben;Shanli Zhang;Zi-Hui Zhang;Xiaojuan Sun;Dabing Li;P.55-62

    GaN based ultraviolet laser diodes

    Jing Yang;Degang Zhao;Zongshun Liu;Yujie Huang;Baibin Wang;Xiaowei Wang;Yuheng Zhang;Zhenzhuo Zhang;Feng Liang;Lihong Duan;Hai Wang;Yongsheng Shi;P.6-15

    11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

    Yansheng Hu;Yuangang Wang;Wei Wang;Yuanjie Lv;Hongyu Guo;Zhirong Zhang;Hao Yu;Xubo Song;Xingye zhou;Tingting Han;Shaobo Dun;Hongyu Liu;Aimin Bu;Zhihong Feng;P.38-41

    A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS

    Yongran Yi;Dixian Zhao;Jiajun Zhang;Peng Gu;Chenyu Xu;Yuan Chai;Huiqi Liu;Xiaohu You;P.22-32