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半导体学报(英文版)

中国电子学会和中国科学院半导体研究所

王守武

月刊

1674-4926

11-5781/TN

jos@semi.ac.cn

010-82304277

100083

北京912信箱

0

0

半导体学报(英文版)/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办,中国科学院半导体研究所承办的学术刊物,报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展,被EI、CA、SA等收录,在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
正式出版
收录年代
    2024年07期

    Sweat-permeable electronic patches by designing three-dimensional liquid diodes

    Kangdi Guan;Di Chen;Qilin Hua;Guozhen Shen1-5

    A 256 Gb/s electronic-photonic monolithically integrated transceiver in 45 nm CMOS

    Ang Li;Haoran Yin;Minye Zhu;Yang Qu;Peng Wang;Daofa Wang;Wei Li;Liyuan Liu;Nan Qi;Ming Li;Qianli Ma;Yujun Xie;Yongliang Xiong;Yingjie Ma;Han Liu;Ye Jin;Menghan Yang;Guike Li6-10

    High-precision X-ray characterization for basic materials in modern high-end integrated circuit

    Weiran Zhao;Qiuqi Mo;Li Zheng;Zhongliang Li;Xiaowei Zhang;Yuehui Yu11-24

    Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO2 nanocomposites and tuning the dielectric relaxation,optical,and photoluminescence performances

    Asmaa M. Ismail;Abeer A. Reffaee;Fawzy G. El Desouky25-38

    Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

    Yuting Chen;Di Geng;Guilei Wang;Chao Zhao;Xinlv Duan;Xueli Ma;Peng Yuan;Zhengying Jiao;Yongqing Shen;Liguo Chai;Qingjie Luan;Jinjuan Xiang39-44

    Reconfigurable and polarization-dependent optical filtering for transflective full-color generation utilizing low-loss phase-change materials

    Shuo Deng;Xiangshui Miao;Mengxi Cui;Jingru Jiang;Chuang Wang;Zengguang Cheng;Huajun Sun;Ming Xu;Hao Tong;Qiang He45-53

    Dual-phase coexistence enables to alleviate resistance drift in phase-change films

    Tong Wu;Chen Chen;Jinyi Zhu;Guoxiang Wang;Shixun Dai54-59

    A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

    Linkai Yi;Yan Yang;Zhihua Li;Daoqun Liu;Wenzheng Cheng;Daimo Li;Guoqi Zhou;Peng Zhang;Bo Tang;Bin Li;Wenwu Wang60-68

    Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

    Bosen Liu;Lu Wang;Qizhi Huang;Leifeng Jiang;Zhongming Zeng;Zhipeng Wei;Baoshun Zhang;Guohao Yu;Huimin Jia;Jingyuan Zhu;Jiaan Zhou;Yu Li;Bingliang Zhang;Zhongkai Du;Bohan Guo69-75

    Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

    Huifan Xiong;Xuesong Lu;Xu Gao;Yuchao Yan;Shuai Liu;Lihui Song;Deren Yang;Xiaodong Pi76-83