期刊信息/Journal information
中国电子学会和中国科学院半导体研究所
王守武
月刊
1674-4926
11-5781/TN
jos@semi.ac.cn
010-82304277
100083
北京912信箱
0
0
半导体学报(英文版)/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办,中国科学院半导体研究所承办的学术刊物,报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展,被EI、CA、SA等收录,在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
Sweat-permeable electronic patches by designing three-dimensional liquid diodes
Kangdi Guan;Di Chen;Qilin Hua;Guozhen Shen1-5
A 256 Gb/s electronic-photonic monolithically integrated transceiver in 45 nm CMOS
Ang Li;Haoran Yin;Minye Zhu;Yang Qu;Peng Wang;Daofa Wang;Wei Li;Liyuan Liu;Nan Qi;Ming Li;Qianli Ma;Yujun Xie;Yongliang Xiong;Yingjie Ma;Han Liu;Ye Jin;Menghan Yang;Guike Li6-10
High-precision X-ray characterization for basic materials in modern high-end integrated circuit
Weiran Zhao;Qiuqi Mo;Li Zheng;Zhongliang Li;Xiaowei Zhang;Yuehui Yu11-24
Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO2 nanocomposites and tuning the dielectric relaxation,optical,and photoluminescence performances
Asmaa M. Ismail;Abeer A. Reffaee;Fawzy G. El Desouky25-38
Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel
Yuting Chen;Di Geng;Guilei Wang;Chao Zhao;Xinlv Duan;Xueli Ma;Peng Yuan;Zhengying Jiao;Yongqing Shen;Liguo Chai;Qingjie Luan;Jinjuan Xiang39-44
Reconfigurable and polarization-dependent optical filtering for transflective full-color generation utilizing low-loss phase-change materials
Shuo Deng;Xiangshui Miao;Mengxi Cui;Jingru Jiang;Chuang Wang;Zengguang Cheng;Huajun Sun;Ming Xu;Hao Tong;Qiang He45-53
Dual-phase coexistence enables to alleviate resistance drift in phase-change films
Tong Wu;Chen Chen;Jinyi Zhu;Guoxiang Wang;Shixun Dai54-59
A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector
Linkai Yi;Yan Yang;Zhihua Li;Daoqun Liu;Wenzheng Cheng;Daimo Li;Guoqi Zhou;Peng Zhang;Bo Tang;Bin Li;Wenwu Wang60-68
Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer
Bosen Liu;Lu Wang;Qizhi Huang;Leifeng Jiang;Zhongming Zeng;Zhipeng Wei;Baoshun Zhang;Guohao Yu;Huimin Jia;Jingyuan Zhu;Jiaan Zhou;Yu Li;Bingliang Zhang;Zhongkai Du;Bohan Guo69-75
Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing
Huifan Xiong;Xuesong Lu;Xu Gao;Yuchao Yan;Shuai Liu;Lihui Song;Deren Yang;Xiaodong Pi76-83
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