期刊信息/Journal information
中国电子学会和中国科学院半导体研究所
王守武
月刊
1674-4926
11-5781/TN
jos@semi.ac.cn
010-82304277
100083
北京912信箱
0
0
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
The surface electron transfer strategy promotes the hole of PDI release and enhances emerging organic pollutant degradation
Yunchuan Yang;Dongyu Wang;Jisheng Geng;Jun Liu;Jun Wang;P.84-91
A review of ToF-based LiDAR
Jie Ma;Shenglong Zhuo;Lei Qiu;Yuzhu Gao;Yifan Wu;Ming Zhong;Rui Bai;Miao Sun;Patrick Yin Chiang;P.7-19
Improved efficiency and stability of inverse perovskite solar cells via passivation cleaning
Kunyang Ge;Chunjun Liang;P.74-83
SSA-over-array(SSoA):A stacked DRAM architecture for nearmemory computing
Xiping Jiang;Fujun Bai;Song Wang;Yixin Guo;Fengguo Zuo;Wenwu Xiao;Yubing Wang;Jianguo Yang;Ming Liu;P.42-53
Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate
Yehua Tang;Yuchao Wang;Chunlan Zhou;Ke-Fan Wang;P.60-68
Single-fundamental-mode cryogenic(3.6 K)850-nm oxideconfined VCSEL
Anjin Liu;Chenxi Hao;Jingyu Huo;Hailong Han;Minglu Wang;Bao Tang;Lingyun Li;Lixing You;Wanhua Zheng;P.69-73
Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy
Pedram Jahandar;Maksym Myronov;P.35-41
The exchange interaction between neighboring quantum dots:physics and applications in quantum information processing
Zheng Zhou;Yixin Li;Zhiyuan Wu;Xinping Ma;Shichang Fan;Shaoyun Huang;P.20-34
Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors
Youla Yang;Daixuan Wu;He Tian;Tian-Ling Ren;P.1-2
Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
Xiao Li;Zhikang Ma;Jinxiong Li;Wengao Pan;Congwei Liao;Shengdong Zhang;Zhuo Gao;Dong Fu;Lei Lu;P.54-59
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