期刊信息/Journal information
：中国电子学会和中国科学院半导体研究所
：王守武
：月刊
：1674-4926
：11-5781/TN
：jos@semi.ac.cn
：010-82304277
：100083
：北京912信箱
半导体学报（英文版）/Journal Journal of Semiconductors北大核心CSCDCSTPCDEI
本学报是由中国电子学会主办，中国科学院半导体研究所承办的学术刊物，报道半导体物理学和半导体科学技术领域内最新的科研成果和技术进展，被EI、CA、SA等收录，在中国科学院、国家科委、中共中央宣传部和国家...展开全部>>
收录年代
Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors
Youla Yang;Daixuan Wu;He Tian;Tian-Ling Ren;P.1-2
A review of ToF-based LiDAR
Jie Ma;Shenglong Zhuo;Lei Qiu;Yuzhu Gao;Yifan Wu;Ming Zhong;Rui Bai;Miao Sun;Patrick Yin Chiang;P.7-19
A magic organic molecule assembled capping layer enables airprocessed α-FAPbI_(3) perovskite solar cell with state-of-the-art performances
Yulong Wang;Xiuwen Xu;Shujuan Liu;Qiang Zhao;P.3-6
Single-fundamental-mode cryogenic(3.6 K)850-nm oxideconfined VCSEL
Anjin Liu;Chenxi Hao;Jingyu Huo;Hailong Han;Minglu Wang;Bao Tang;Lingyun Li;Lixing You;Wanhua Zheng;P.69-73
The exchange interaction between neighboring quantum dots:physics and applications in quantum information processing
Zheng Zhou;Yixin Li;Zhiyuan Wu;Xinping Ma;Shichang Fan;Shaoyun Huang;P.20-34
SSA-over-array(SSoA):A stacked DRAM architecture for nearmemory computing
Xiping Jiang;Fujun Bai;Song Wang;Yixin Guo;Fengguo Zuo;Wenwu Xiao;Yubing Wang;Jianguo Yang;Ming Liu;P.42-53
Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
Xiao Li;Zhikang Ma;Jinxiong Li;Wengao Pan;Congwei Liao;Shengdong Zhang;Zhuo Gao;Dong Fu;Lei Lu;P.54-59
Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate
Yehua Tang;Yuchao Wang;Chunlan Zhou;Ke-Fan Wang;P.60-68
The surface electron transfer strategy promotes the hole of PDI release and enhances emerging organic pollutant degradation
Yunchuan Yang;Dongyu Wang;Jisheng Geng;Jun Liu;Jun Wang;P.84-91
Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy
Pedram Jahandar;Maksym Myronov;P.35-41
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